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JB40N065J1P3
Insulated Gate Bipolar Transistor Silicon N Channel IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective.
Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features
• Enhancement mode type
•Low saturation voltage : VC E (sat) = 1.24 V (Typ) (IC = 40 A)

Typical Applications
• Current Resonance Inverter Switching Application
JB75N065JP3
Insulated Gate Bipolar Transistor Silicon N Channel IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective.
Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features
•Enhancement mode type
•Low saturation voltage : VC E (sat) = 1.65 V (Typ) (IC = 75 A)

Typical Applications
• For industrial UPS and solar applications
JB40N120JP3
Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective.
Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features
• Optimized for High Speed Switching
• These are Pb−Free Devices

Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding

JB75N120JP3
Insulated Gate Bipolar Transistor Silicon N Channel IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective.
Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

Features
• Optimized for High Speed Switching
• These are Pb−Free Devices

Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding

 

 

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